| dc.contributor | Univ Mayor, Fac Estudios Interdisciplinarios, Ctr Invest DAiTA Lab, Chile | es |
| dc.contributor.author | Gardill, Aedan | |
| dc.contributor.author | Kemeny, Ishita | |
| dc.contributor.author | Cambria, Matthew C. | |
| dc.contributor.author | Li, Yanfei | |
| dc.contributor.author | Dinani, Hossein T. [Univ Mayor, Fac Estudios Interdisciplinarios, Ctr Invest DAiTA Lab, Chile] | |
| dc.contributor.author | Norambuena, Ariel [Univ Mayor, Fac Estudios Interdisciplinarios, Ctr Invest DAiTA Lab, Chile] | |
| dc.contributor.author | Maze, Jeronimo R. | |
| dc.contributor.author | Lordi, Vincenzo | |
| dc.contributor.author | Kolkowitz, Shimon | |
| dc.date.accessioned | 2023-12-18T22:20:49Z | |
| dc.date.available | 2023-12-18T22:20:49Z | |
| dc.date.issued | 2021-08-25 | |
| dc.identifier.citation | Gardill, A., Kemeny, I., Cambria, M. C., Li, Y., Dinani, H. T., Norambuena, A., ... & Kolkowitz, S. (2021). Probing charge dynamics in diamond with an individual color center. Nano Letters, 21(16), 6960-6966. | es |
| dc.identifier.issn | 1530-6984 | |
| dc.identifier.issn | eISSN 1530-6992 | |
| dc.identifier.other | WOS: 000691792400031 | |
| dc.identifier.other | PMID: 34339601 | |
| dc.identifier.uri | https://repositorio.umayor.cl/xmlui/handle/sibum/9139 | |
| dc.identifier.uri | https://pubs-acs-org.bibliotecadigital.umayor.cl:2443/doi/epdf/10.1021/acs.nanolett.1c02250 | |
| dc.identifier.uri | https://doi.org/10.1021/acs.nanolett.1c02250 | |
| dc.identifier.uri | https://arxiv.org/pdf/2106.05405.pdf | |
| dc.description.abstract | Control over the charge states of color centers in solids is necessary to fully utilize them in quantum technologies. However, the microscopic charge dynamics of deep defects in wide-band-gap semiconductors are complex, and much remains unknown. We utilize a single-shot charge-state readout of an individual nitrogen-vacancy (NV) center to probe the charge dynamics of the surrounding defects in diamond. We show that the NV center charge state can be converted through the capture of holes produced by optical illumination of defects many micrometers away. With this method, we study the optical charge conversion of silicon-vacancy (SiV) centers and provide evidence that the dark state of the SiV center under optical illumination is SiV2-. These measurements illustrate that charge carrier generation, transport, and capture are important considerations in the design and implementation of quantum devices with color centers and provide a novel way to probe and control charge dynamics in diamond. | es |
| dc.description.sponsorship | The authors thank Nathalie de Leon for enlightening discussions, helpful insights, and comments on the manuscript. Experimental work, data analysis, and theoretical efforts conducted at UW-Madison and Lawrence Livermore National Laboratory were supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) under Award #DE-SC0020313. Part of this work by V.L. was performed under the auspices of the U.S. Department of Energy at Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344. Theoretical contributions conducted at Pontificia Universidad Catolica de Chile by J.R.M. and A.N. were supported by ANID Fondecyt 1180673 and ANID PIA ACT192023. A.N. and H.T.D. acknowledge financial support from Universidad Mayor through the Postdoctoral Fellowship. A.G. acknowledges support from the Department of Defense through the National Defense Science and Engineering Graduate Fellowship (NDSEG) program. | es |
| dc.format.extent | 7 p., PDF | es |
| dc.language.iso | en_US | es |
| dc.publisher | AMER CHEMICAL SOC | es |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Chile | es |
| dc.title | Probing Charge Dynamics in Diamond with an Individual Color Center | es |
| dc.type | Artículo o Paper | es |
| umayor.indizador | COT | es |
| umayor.indexado | Web of Science | es |
| umayor.indexado | Scopus | es |
| umayor.indexado | PUBMED | es |
| dc.identifier.doi | 10.1021/acs.nanolett.1c02250 | |
| umayor.indicadores.wos-(cuartil) | Q1 | |
| umayor.indicadores.scopus-(scimago-sjr) | SCIMAGO/ INDICE H: 531 | |
| umayor.indicadores.scopus-(scimago-sjr) | SJR 3.54 | |