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dc.contributorUniv Mayor, Fac Estudios Interdisciplinarios, Ctr Invest DAiTA Lab, Chilees
dc.contributor.authorGardill, Aedan
dc.contributor.authorKemeny, Ishita
dc.contributor.authorCambria, Matthew C.
dc.contributor.authorLi, Yanfei
dc.contributor.authorDinani, Hossein T. [Univ Mayor, Fac Estudios Interdisciplinarios, Ctr Invest DAiTA Lab, Chile]
dc.contributor.authorNorambuena, Ariel [Univ Mayor, Fac Estudios Interdisciplinarios, Ctr Invest DAiTA Lab, Chile]
dc.contributor.authorMaze, Jeronimo R.
dc.contributor.authorLordi, Vincenzo
dc.contributor.authorKolkowitz, Shimon
dc.date.accessioned2023-12-18T22:20:49Z
dc.date.available2023-12-18T22:20:49Z
dc.date.issued2021-08-25
dc.identifier.citationGardill, A., Kemeny, I., Cambria, M. C., Li, Y., Dinani, H. T., Norambuena, A., ... & Kolkowitz, S. (2021). Probing charge dynamics in diamond with an individual color center. Nano Letters, 21(16), 6960-6966.es
dc.identifier.issn1530-6984
dc.identifier.issneISSN 1530-6992
dc.identifier.otherWOS: 000691792400031
dc.identifier.otherPMID: 34339601
dc.identifier.urihttps://repositorio.umayor.cl/xmlui/handle/sibum/9139
dc.identifier.urihttps://pubs-acs-org.bibliotecadigital.umayor.cl:2443/doi/epdf/10.1021/acs.nanolett.1c02250
dc.identifier.urihttps://doi.org/10.1021/acs.nanolett.1c02250
dc.identifier.urihttps://arxiv.org/pdf/2106.05405.pdf
dc.description.abstractControl over the charge states of color centers in solids is necessary to fully utilize them in quantum technologies. However, the microscopic charge dynamics of deep defects in wide-band-gap semiconductors are complex, and much remains unknown. We utilize a single-shot charge-state readout of an individual nitrogen-vacancy (NV) center to probe the charge dynamics of the surrounding defects in diamond. We show that the NV center charge state can be converted through the capture of holes produced by optical illumination of defects many micrometers away. With this method, we study the optical charge conversion of silicon-vacancy (SiV) centers and provide evidence that the dark state of the SiV center under optical illumination is SiV2-. These measurements illustrate that charge carrier generation, transport, and capture are important considerations in the design and implementation of quantum devices with color centers and provide a novel way to probe and control charge dynamics in diamond.es
dc.description.sponsorshipThe authors thank Nathalie de Leon for enlightening discussions, helpful insights, and comments on the manuscript. Experimental work, data analysis, and theoretical efforts conducted at UW-Madison and Lawrence Livermore National Laboratory were supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) under Award #DE-SC0020313. Part of this work by V.L. was performed under the auspices of the U.S. Department of Energy at Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344. Theoretical contributions conducted at Pontificia Universidad Catolica de Chile by J.R.M. and A.N. were supported by ANID Fondecyt 1180673 and ANID PIA ACT192023. A.N. and H.T.D. acknowledge financial support from Universidad Mayor through the Postdoctoral Fellowship. A.G. acknowledges support from the Department of Defense through the National Defense Science and Engineering Graduate Fellowship (NDSEG) program.es
dc.format.extent7 p., PDFes
dc.language.isoen_USes
dc.publisherAMER CHEMICAL SOCes
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Chilees
dc.titleProbing Charge Dynamics in Diamond with an Individual Color Centeres
dc.typeArtículo o Paperes
umayor.indizadorCOTes
umayor.indexadoWeb of Sciencees
umayor.indexadoScopuses
umayor.indexadoPUBMEDes
dc.identifier.doi10.1021/acs.nanolett.1c02250
umayor.indicadores.wos-(cuartil)Q1
umayor.indicadores.scopus-(scimago-sjr)SCIMAGO/ INDICE H: 531
umayor.indicadores.scopus-(scimago-sjr)SJR 3.54


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